US Patent Issued to Meta Platforms Technologies on July 1 for "Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow" (Irish Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,528, issued on July 1, was assigned to Meta Platforms Technologies LLC (Menlo Park, Calif.).

"Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow" was invented by Alexander Tonkikh (Cork, Ireland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro-light emitting diode (micro-LED) wafer includes a substrate, an n-type semiconductor layer grown on the substrate, an active region grown on the n-type semiconductor layer and configured to emit visible light, and a p-type semiconductor layer grown on the active region. The active region includes a compressive-strained quantum well layer and compressive-strained quantum bar...