ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,158, issued on Aug. 19, was assigned to MEMORIST Co. LTD. (Taipei, Taiwan).
"Memory device and method of manufacturing the same" was invented by Chao-Yang Chen (Taipei, Taiwan) and Chih-Jen Huang (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method of manufacturing the same are provided. The memory device includes a substrate, a memory cell array, and a memory cell interconnection structure. The memory cell array is disposed on the substrate. Each memory cell in the memory cell array includes a transistor unit and a memory unit that are electrically connected to each other. The memory cell interconnection struc...