US Patent Issued to Mellanox Technologies on June 17 for "Fabricating semiconductor devices, such as VCSELs, with an oxide confinement layer" (Israeli, Swedish Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,711, issued on June 17, was assigned to Mellanox Technologies Ltd. (Yokneam, Israel).

"Fabricating semiconductor devices, such as VCSELs, with an oxide confinement layer" was invented by Yuri Berk (Kiryat Tivon, Israel), Vladimir Iakovlev (Ecublens, Israel), Anders Larsson (Hovas, Sweden), Itshak Kalifa (Bat-Yam, Israel), Matan Galanty (Korazim, Israel), Isabelle Cestier (Haifa, Israel) and Elad Mentovich (Tel Aviv, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two o...