US Patent Issued to MEISHAN BOYA ADVANCED MATERIALS on Sept. 16 for "Methods and devices for growing oxide crystals in oxygen atmosphere" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,096, issued on Sept. 16, was assigned to MEISHAN BOYA ADVANCED MATERIALS Co. LTD. (Meishan, China).

"Methods and devices for growing oxide crystals in oxygen atmosphere" was invented by Yu Wang (Meishan, China), Weiming Guan (Meishan, China) and Min Li (Meishan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems ma...