US Patent Issued to Meijo University on Oct. 7 for "Semiconductor device and method for producing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,735, issued on Oct. 7, was assigned to Meijo University (Nagoya, Japan).

"Semiconductor device and method for producing semiconductor device" was invented by Koji Okuno (Kiyosu, Japan), Koichi Mizutani (Kiyosu, Japan), Masaki Oya (Kiyosu, Japan), Kazuyoshi Iida (Kiyosu, Japan), Satoshi Kamiyama (Nagoya, Japan), Tetsuya Takeuchi (Nagoya, Japan), Motoaki Iwaya (Nagoya, Japan) and Isamu Akasaki (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficien...