ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,684, issued on Oct. 21, was assigned to MEIDEN NANOPROCESS INNOVATIONS INC. (Tokyo).
"Oxide film formation method" was invented by Takayuki Hagiwara (Matsudo, Japan) and Naoto Kameda (Moriya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An oxide film formed on a film formation surface of a film formation target housed in a chamber includes a first film formed on the film formation surface and a second film formed on a first film surface. The first film is formed on the film formation surface of the film formation target by an ALD first film formation method that uses only an at least 80 volume % ozone gas as an oxidizing agent. The second fi...