ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,529, issued on Nov. 25, was assigned to MediaTek Inc. (Hsinchu, Taiwan).

"Memory with built-in synchronous-write-through redundancy and associated test method" was invented by Che-Wei Chou (Hsinchu, Taiwan), Ya-Ting Yang (Hsinchu, Taiwan), Shu-Lin Lai (Hsinchu, Taiwan), Chi-Kai Hsieh (Hsinchu, Taiwan), Yi-Ping Kuo (Hsinchu, Taiwan), Chi-Hao Hong (Hsinchu, Taiwan), Jia-Jing Chen (Hsinchu, Taiwan), Yi-Te Chiu (Hsinchu, Taiwan) and Jiann-Tseng Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory with built-in synchronous-write-through (SWT) redundancy includes a plurality of memory input/output (IO) arrays, a plurality of SWT ...