US Patent Issued to MediaTek on July 8 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,882, issued on July 8, was assigned to MediaTek Inc. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Po-Chao Tsao (Hsinchu, Taiwan) and Hsien-Hsin Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes an insulator layer, first and second field-effect transistor devices, an isolation field-effect transistor device, front-side gate and back-side gate contacts. Each of the first and second field-effect transistor devices and the isolation field-effect transistor device includes a fin structure and first and second epitax...