US Patent Issued to MediaTek on Dec. 30 for "Semiconductor device with improved matching characteristics of polysilicon resistive structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,918, issued on Dec. 30, was assigned to MediaTek Inc. (Hsinchu, Taiwan).

"Semiconductor device with improved matching characteristics of polysilicon resistive structures" was invented by Cheng-Hua Lin (Hsinchu, Taiwan) and Ching-Han Jan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a polysilicon resistive structure, dummy polysilicon resistive structures, and a polysilicon ring structure. The semiconductor substrate has an active region and a passive region adjacent to the active region. The polysilicon resistive structure is disposed o...