ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,455, issued on Dec. 23, was assigned to MediaTek Inc. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Cheng-Hua Lin (Hsinchu, Taiwan), Yan-Liang Ji (Hsinchu, Taiwan) and Ching-Han Jan (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a well region and a gate structure formed over the well region of the semiconductor substrate. The semiconductor device also includes a gate spacer structure having a first spacer portion and a second spacer portion on opposite sidewalls of the gate structure. The semiconductor device also includes a s...