US Patent Issued to MaxPower Semiconductor on April 22 for "Trench-gated heterostructure and double-heterostructure active devices" (California Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,817, issued on April 22, was assigned to MaxPower Semiconductor Inc. (San Jose, Calif.).

"Trench-gated heterostructure and double-heterostructure active devices" was invented by Jun Zeng (Torrance, Calif.) and Mohamed N. Darwish (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Heterostructure and double-heterostructure trench-gate devices, in which the substrate and/or the body are constructed of a narrower-bandgap semiconductor material than the uppermost portion of the drift region. Fabrication most preferably uses a process where gate dielectric anneal is performed after all other high-temperature steps have already been done."

Th...