US Patent Issued to Maxeon Solar on July 15 for "Local patterning and metallization of semiconductor structures using a laser beam" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,050, issued on July 15, was assigned to Maxeon Solar Pte. Ltd. (Singapore).

"Local patterning and metallization of semiconductor structures using a laser beam" was invented by Pei Hsuan Lu (San Jose, Calif.), Benjamin I. Hsia (Fremont, Calif.) and Taeseok Kim (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a m...