US Patent Issued to Max-Planck-Gesellschaft zur Forderung der Wissenschaften on Oct. 28 for "DEPFET transistor" (German Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,767, issued on Oct. 28, was assigned to Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V. (Munich).

"DEPFET transistor" was invented by Alexander Bahr (Grobenzell, Germany), Peter Lechner (Holzkirchen, Germany), Jelena Ninkovic (Munich), Rainer Richter (Munich), Florian Schopper (Munich) and Johannes Treis (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first mai...