US Patent Issued to Massachusetts Institute of Technology on May 20 for "Epitaxial growth using carbon buffer on substrate" (Massachusetts Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,227, issued on May 20, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.).

"Epitaxial growth using carbon buffer on substrate" was invented by Jeehwan Kim (Cambridge, Mass.) and Wei Kong (Cambridge, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform, and aft...