ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,591, issued on June 24, was assigned to Marvell Asia Pte Ltd. (Singapore).
"Gate stack for metal gate transistor" was invented by Runzi Chang (Saratoga, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Forming a metal gate transistor includes forming a semiconductor channel in a substrate, and depositing a source electrode and a drain electrode on the semiconductor channel. The source and drain electrodes are spaced apart. Dielectric spacers are provided above the source and drain electrodes to define a gate void spanning the source and drain electrodes. A dielectric layer is deposited on a bottom wall and sidewalls of the gate void. A work-fun...