ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,308, issued on June 17, was assigned to Marvell Asia Pte Ltd (Singapore).

"Germanium-on-silicon avalanche photodetector in silicon photonics platform, method of making the same" was invented by Yu Li (Santa Clara, Calif.) and Masaki Kato (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping stat...