US Patent Issued to Marlin Semiconductor on Dec. 16 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,681, issued on Dec. 16, was assigned to Marlin Semiconductor Ltd. (Dublin).

"Semiconductor device and method for fabricating the same" was invented by Te-Chang Hsu (Tainan, Taiwan), Chun-Chia Chen (Tainan, Taiwan) and Yao-Jhan Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric...