US Patent Issued to MAGVISION SEMICONDUCTOR (BEIJING) on May 27 for "Image sensor pixel with deep trench isolation structure" (California Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,625, issued on May 27, was assigned to MAGVISION SEMICONDUCTOR (BEIJING) INC. (Beijing).

"Image sensor pixel with deep trench isolation structure" was invented by Gang Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor device is disclosed. The image sensor device includes a number of pixels and neighboring pixels are isolated by deep trench isolation structures. In an embodiment, a method of forming a deep trench isolation structure includes performing a first etching process to remove a portion of a substrate, thereby forming a first trench in the substrate, performing a first doping process to form a first sidewa...