US Patent Issued to MAGNOLIA WHITE on Jan. 27 for "Semiconductor device having an etching stopper layer on a first insulation layer" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,519, issued on Jan. 27, was assigned to MAGNOLIA WHITE Corp. (Tokyo).

"Semiconductor device having an etching stopper layer on a first insulation layer" was invented by Hajime Watakabe (Tokyo), Masashi Tsubuku (Tokyo), Kentaro Miura (Tokyo), Akihiro Hanada (Tokyo) and Takaya Tamaru (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a semiconductor layer including a source area, a drain area and a channel area, a first insulating layer, an etching stopper layer located immediately above the channel area and being thinner than the first insulating layer, a second insulating layer provided...