ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,944, issued on Dec. 30, was assigned to MAGNOLIA WHITE Corp. (Tokyo).
"Semiconductor device with an oxide semiconductor having a plurality of openings" was invented by Ryo Onodera (Tokyo), Masashi Tsubuku (Tokyo) and Hajime Watakabe (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a substrate, a first insulating layer disposed on the substrate, an oxide semiconductor disposed on the first insulating layer and formed in an island shape, a second insulating layer covering the oxide semiconductor, a gate electrode disposed on the second insulating layer, and a source electrode and a drai...