US Patent Issued to MAGNOLIA WHITE on Aug. 5 for "Semiconductor device having metal oxide layer with tapered side surface" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,663, issued on Aug. 5, was assigned to MAGNOLIA WHITE Corp. (Tokyo).

"Semiconductor device having metal oxide layer with tapered side surface" was invented by Toshiki Kaneko (Tokyo) and Fumiya Kimura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an oxide semiconductor layer over the substrate, a gate insulating layer over the oxide semiconductor layer, a metal oxide layer over the gate insulating layer, and a gate electrode over the metal oxide layer. A first side surface of the metal oxide protrudes from a second side surface of the gate electrode in a plan view."

The patent was filed on May 17, ...