ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,745, issued on Sept. 2, was assigned to MAGNACHIP SEMICONDUCTOR LTD. (Cheongju-si, South Korea).
"Memory repair device" was invented by Jun Soo Kwack (Cheongju-si, South Korea) and Yong Sup Lee (Cheongju-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory repair device for detecting a fault cell in a memory and replacing it with a redundancy cell using a serial interface method is provided. The memory repair device include a repair information control block and at least one memory block including at least one memory. The repair information control block is configured to perform a built-in self-test (BIST) for each memory block, a...