US Patent Issued to MagnaChip Semiconductor on Aug. 26 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,370, issued on Aug. 26, was assigned to MagnaChip Semiconductor Ltd. (Cheongju-si, South Korea).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Guk Hwan Kim (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source region, a drain region, and a gate insulating film formed on a substrate, a gate electrode formed on the gate insulating film, a first insulating film pattern formed to extend from the source region to a part of a top surface of the gate electrode, and a spacer formed on a side surface of the gate electrode in a direction of the drain region."...