US Patent Issued to Magnachip Mixed-Signal on April 29 for "Mask layout, semiconductor device and manufacturing method using the same" (South Korean Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,691, issued on April 29, was assigned to Magnachip Mixed-Signal Ltd. (Cheongju-si, South Korea).

"Mask layout, semiconductor device and manufacturing method using the same" was invented by Guk Hwan Kim (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the dr...