US Patent Issued to MACRONIX International on Sept. 9 for "Memory device and operating method for memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,629, issued on Sept. 9, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and operating method for memory device" was invented by Chen Wang (New Taipei, Taiwan) and Ya-Jui Lee (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and an operating method for the memory device are provided. The memory device includes a memory array and a control circuit. The memory array includes memory blocks. Each of the memory blocks is, for example a three-dimensional NAND flash memory block. The memory device provides a storage media with high-performance and high-capacity. The control circuit provides a...