ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,172, issued on Sept. 30, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Operation method for memory device" was invented by Shih-Chung Lee (Katsuradaiminami, Japan) and Chi-Yuan Chin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method for a memory device includes: selecting a selected word line from a plurality of word lines; applying a program voltage to the selected word line; and applying a pass voltage to a plurality of adjacent word lines adjacent to the selected word line. The pass voltage includes a first part and a second part. A timing of the first part of the pass voltage is earlier tha...