US Patent Issued to MACRONIX INTERNATIONAL on Sept. 2 for "Memory structure, manufacturing method thereof, and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,720, issued on Sept. 2, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory structure, manufacturing method thereof, and operating method thereof" was invented by Feng-Min Lee (Hsinchu, Taiwan), Po-Hao Tseng (Taichung, Taiwan), Yu-Yu Lin (New Taipei, Taiwan), Yu-Hsuan Lin (Taichung, Taiwan), Wei-Fu Wang (Keelung, Taiwan) and Wei-Lun Weng (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes insulating layers, gate layers, a first doping layer, channel layers, a columnar channel, second doping layers, a first dielectric layer, second dielectric layers, a third dielectric layer, and fourth di...