US Patent Issued to MACRONIX INTERNATIONAL on Sept. 2 for "Memory device with multi-layered charge storage stack" (Taiwanese, Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,342, issued on Sept. 2, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device with multi-layered charge storage stack" was invented by Chi-Pin Lu (Zhubei, Taiwan), Pei-Ci Jhang (Zhudong Township, Hsinchu County, Taiwan), Masaru Nakamichi (Chigasaki, Japan), Ling-Wuu Yang (Hsinchu, Taiwan) and Kuang-Chao Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a plurality of gate layers, a laterally stacked multi-layered memory structure, and a vertical channel layer. The gate layers laterally extend above the substrate and spaced apart from each other. The laterally stac...