ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,735, issued on Sept. 2, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"3D memory" was invented by Cheng-Yu Lee (Taoyuan, Taiwan), Teng-Hao Yeh (Hsinchu County, Taiwan) and Hang-Ting Lue (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory including a plurality of tiles, a bit line transistor structure, a first upper conductive layer, and a second upper conductive layer. The bit line transistor structure is disposed between a first sub-tile and a second sub-tile in the plurality of tiles. The first upper conductive layer includes a plurality of local bit lines, a plurality of local source lines and a conduc...