ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,820, issued on Oct. 7, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory including thermal anneal circuits and methods for operating the same" was invented by Hang-Ting Lue (Hsinchu, Taiwan), Teng-Hao Yeh (Hsinchu, Taiwan) and Wei-Chen Chen (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An array of memory cells includes a resistive component disposed in thermal communication with a group of memory cells in the array of memory cells. A capacitor and a circuit to cause discharge of the capacitor via the resistive component induces thermal anneal of the group of memory cells. A charge pump and a circuit to enabl...