ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,822, issued on Oct. 7, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and reading method thereof" was invented by You-Liang Chou (Taichung, Taiwan), Wen-Jer Tsai (Hualien, Taiwan) and Chun-Chang Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a reading method thereof are provided. A second word line and a third word line are adjacent to a first word line. The reading method includes the following steps. A read procedure is executed to read a plurality of memory cells of the first word line. When a read error occurs, a re-read procedure is executed for some of the memory cells b...