ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,823, issued on Oct. 7, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory device and reading method thereof" was invented by You-Liang Chou (Taichung, Taiwan), Wen-Jer Tsai (Hualien, Taiwan) and Chun-Chang Lu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a reading method thereof are provided. The memory device at least includes a first word line, a second word line and a third word line. The reading method includes the following steps. A read procedure is executed to read a plurality of memory cells connected to the first word line. A recognition procedure is executed in response to at lea...