US Patent Issued to MACRONIX International on Oct. 7 for "Memory device and detection method for defeated status of memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,689, issued on Oct. 7, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and detection method for defeated status of memory cell" was invented by Wei-Han Chen (Tainan, Taiwan) and Yih-Shan Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a detection method for detecting a defeated status of a memory cell are provided. The memory device is, for example a three dimensional NAND flash memory circuit, and provides a storage media with high-performance and high-capacity. The detection method includes: searching status data stored in a page buffer, finding set status memory cells, and ...