ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,525, issued on Oct. 28, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Three-dimensional memory device" was invented by Yu-Hsuan Lin (Taichung, Taiwan) and Yu-Yu Lin (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device comprising word lines, bit lines, a 3D memory array, encoding circuits and sensing circuits is provided in the present disclosure. The 3D memory array comprises two-dimensional (2D) memory arrays and stores first to fourth neural network data related to at least one neural network model. Each of the 2D memory arrays is coupled to the word lines and the bit lines...