ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,196, issued on Oct. 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Operating method of memory device and memory system" was invented by Che-Ping Chen (Taipei, Taiwan) and Ya-Jui Lee (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method of a memory device including the following operations is provided. Applying a read voltage to a selected page of a plurality of programmed memory pages. Applying a first pass voltage to unselected pages of the plurality of programmed memory pages. Applying a second pass voltage to at least one unprogrammed memory page, wherein the first pass voltage is larger tha...