ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,423, issued on Oct. 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"3D virtual ground memory and manufacturing methods for same" was invented by Erh-Kun Lai (Tarrytown, N.Y.) and Hsiang-Lan Lung (Ardsley, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices are implemented within a vertical memory structure, comprising a stack of alternating layers of insulator material and word line material, with a series of alternating conductive pillars and insulating pillars disposed through stack. Data storage structures are disposed on inside surfaces of the layers of word line material at cross-points of the insulating p...