US Patent Issued to MACRONIX INTERNATIONAL on Oct. 14 for "Memory device and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,465, issued on Oct. 14, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same" was invented by Chih-Hsiung Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method for manufacturing the same are provided. The memory device includes a stacked structure, a lower isolation structure in the stacked structure and two memory strings in the stacked structure. The stacked structure includes conductive layers. The lower isolation structure has an upper surface in a lower portion of the stacked structure. The lower isolation structure separates at least o...