US Patent Issued to MACRONIX INTERNATIONAL on Nov. 4 for "Memory structure, manufacturing method thereof, operating method thereof, and memory array" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,869, issued on Nov. 4, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory structure, manufacturing method thereof, operating method thereof, and memory array" was invented by Wei-Fu Wang (Keelung, Taiwan), Yu-Yu Lin (New Taipei, Taiwan), Feng-Min Lee (Hsinchu, Taiwan), Wei-Lun Weng (Tainan, Taiwan) and Ming-Hsiu Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes insulating layers, gate layers, a first doping layer, second doping layers, third doping layers, a columnar channel, a first dielectric layer, second dielectric layers, and a third dielectric layer. The first doping layer an...