US Patent Issued to MACRONIX International on Nov. 4 for "Memory device with insulating pillar in staircase region and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,720, issued on Nov. 4, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device with insulating pillar in staircase region and method of forming the same" was invented by Chia-Tze Huang (Hsing-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can be applied to a 3D AND flash memory. The memory device includes a substrate, a first stacked structure, a second stacked structure, a channel structure, an insulating pillar, a through via and a conductive layer. The substrate has a memory array region and a staircase region. The first stacked structure is disposed on the substrate in the memory array region ...