US Patent Issued to MACRONIX INTERNATIONAL on Nov. 25 for "Memory structure with three transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,211, issued on Nov. 25, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory structure with three transistors" was invented by Wei-Chen Chen (Taoyuan, Taiwan) and Hang-Ting Lue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a substrate, a first gate structure, a second gate structure, a third gate structure, and channel bodies separated from each other and passing through the first gate structure, the second gate structure and the third gate structure along a first direction. The first gate structure, the second gate structure and the third gate structure are disposed on the substrat...