US Patent Issued to MACRONIX International on Nov. 11 for "3D memory device and method of forming seal structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,799, issued on Nov. 11, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"3D memory device and method of forming seal structure" was invented by Cheng-Yu Lee (Taoyuan, Taiwan) and Teng-Hao Yeh (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a 3D memory device such as a 3D AND flash memory and a method of forming a seal structure. The 3D memory device includes a chip region including a chip array and a seal region including a seal structure. The seal structure includes a ring-shaped stack structure disposed on a substrate and surrounding the chip array and a dummy channel pillar...