ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,075, issued on May 20, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Operation method for a memory device" was invented by Chih-Chieh Cheng (Zhubei, Taiwan), Chun-Chang Lu (Yunlin County, Taiwan) and Wen-Jer Tsai (Hualien, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-turn on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line volt...