US Patent Issued to MACRONIX International on May 20 for "3D semiconductor device and array layout with isolated conductive pillars" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,023, issued on May 20, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"3D semiconductor device and array layout with isolated conductive pillars" was invented by Hang-Ting Lue (Hsinchu, Taiwan), Wei-Chen Chen (Taoyuan, Taiwan), Teng Hao Yeh (Hsinchu County, Taiwan) and Guan-Ru Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a 3D flash memory and an array layout thereof. The 3D flash memory includes a gate stack structure, a annular channel pillar, a first source/drain pillar, a second source/drain pillar and a charge storage structure. The gate stack structure is disposed on a dielectric base and ...