US Patent Issued to MACRONIX International on March 4 for "3D and flash memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,428, issued on March 4, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"3D and flash memory device and method of fabricating the same" was invented by Hang-Ting Lue (Hsinchu, Taiwan), Chia-Jung Chiu (Hsinchu County, Taiwan), Teng-Hao Yeh (Hsinchu County, Taiwan) and Guan-Ru Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional AND flash memory device includes a gate stack structure, a charge storage structure, a first conductive pillar and a second conductive pillar, an insulating pillar, and a channel pillar. The gate stack structure includes gate layers and insulating layers stacked alternately...