US Patent Issued to MACRONIX INTERNATIONAL on March 18 for "Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,136, issued on March 18, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material" was invented by Cheng-Hsien Lu (Taoyuan, Taiwan), Yun-Yuan Wang (Kaohsiung, Taiwan), Ming-Hsiu Lee (Hsinchu, Taiwan) and Dai-Ying Lee (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate and a via structure. The via structure is through the substrate. The via structure includes a first conductive portion, a second co...