US Patent Issued to MACRONIX International on March 18 for "Memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,543, issued on March 18, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of fabricating the same" was invented by Jung-Chuan Ting (Hsinchu County, Taiwan) and Ya-Chun Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array and at least one first vertical transistor over a dielectric substrate. The at least one first vertical transistor is disposed above the dielectric substrate in a staircase region, and includes: a first wraparound gate layer, a channel pillar, a gate dielectric layer, a first source and drain region, and a second source and drain reg...