ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,934, issued on March 18, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device and compensation method of data retention thereof" was invented by Chih-Wei Hu (Miaoli County, Taiwan) and Chih-Chang Hsieh (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, such as a 3D AND type flash memory, and a compensation method of data retention thereof are provided. The compensation method includes the following. A reading operation is performed on each of a plurality of programmed memory cells of the memory device. Whether a charge loss phenomenon occurs in the programmed memory cells is determined thro...