ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,949, issued on March 18, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Teng-Hao Yeh (Hsinchu County, Taiwan), Hang-Ting Lue (Hsinchu, Taiwan) and Chih-Wei Hu (Miaoli County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, such as a three-dimensional AND or NOR flash memory, includes a first chip and a second chip. The first chip has multiple source line switches, multiple bit line switches, multiple page buffers, and multiple sensing amplifiers. The first chip has multiple first pads. The second chip has multiple memory cells to form multiple memory cell blocks. Multiple se...