US Patent Issued to MACRONIX International on March 18 for "3D memory structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,093, issued on March 18, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"3D memory structure and method of forming the same" was invented by Kuan-Yuan Shen (Hsinchu County, Taiwan), Chung-Hao Fu (Kaohsiung, Taiwan) and Chia-Jung Chiu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a 3D memory structure such as 3D Flash memory structure applying for 3D AND flash memory and a method of forming the same. An etching stop layer is formed on a substrate including active elements. A stacked layer is formed on the etching stop layer. The stacked layer includes insulation layers and ...