ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,607, issued on June 3, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory device and method for operating the same" was invented by Po-Hao Tseng (Taichung, Taiwan), Feng-Min Lee (Hsinchu, Taiwan), Tian-Cih Bo (Zhubei, Taiwan) and Ming-Hsiu Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second...